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Proceedings Paper

Contact patterning strategies for 32nm and 28nm technology
Author(s): Bradley Morgenfeld; Ian Stobert; Ju j An; Hideki Kanai; Norman Chen; Massud Aminpur; Colin Brodsky; Alan Thomas
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Paper Abstract

As 193 nm immersion lithography is extended indefinitely to sustain technology roadmaps, there is increasing pressure to contain escalating lithography costs by identifying patterning solutions that can minimize the use of multiple-pass processes. Contact patterning for the 32/28 nm technology nodes has been greatly facilitated by just-in-time introduction of new process enablers that allow the simultaneous support of flexible foundry-oriented ground rules alongside highperformance technology, while also migrating to a single-pass patterning process. The incorporation of device based performance metrics along with rigorous patterning and structural variability studies were critical in the evaluation of material innovation for improved resolution and CD shrink along with novel data preparation flows utilizing aggressive strategies for SRAF insertion and retargeting.

Paper Details

Date Published: 22 March 2011
PDF: 9 pages
Proc. SPIE 7973, Optical Microlithography XXIV, 797319 (22 March 2011); doi: 10.1117/12.879773
Show Author Affiliations
Bradley Morgenfeld, IBM Semiconductor Research and Development Ctr. (United States)
Ian Stobert, IBM Semiconductor Research and Development Ctr. (United States)
Ju j An, IBM Semiconductor Research and Development Ctr. (United States)
Hideki Kanai, Toshiba America Electronic Components, Inc. (Japan)
Norman Chen, GLOBALFOUNDRIES Inc. (United States)
Massud Aminpur, IBM Semiconductor Research and Development Ctr. (United States)
Colin Brodsky, IBM Semiconductor Research and Development Ctr. (United States)
Alan Thomas, IBM Semiconductor Research and Development Ctr. (United States)


Published in SPIE Proceedings Vol. 7973:
Optical Microlithography XXIV
Mircea V. Dusa, Editor(s)

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