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Proceedings Paper

Negative-tone imaging (NTI) at the 22nm node: process and material development
Author(s): Jason Cantone; Karen Petrillo; Yongan Xu; Guillaume Landie; Shinichiro Kawakami; Shannon Dunn; Matt Colburn
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Paper Abstract

With 22nm logic node arriving prior to EUV implementation, alternative immersion optical lithographic processes are required to drive down to smaller feature sizes. There is an ongoing effort to examine the application of the negative tone imaging (NTI) process for current and future nodes. Although NTI has previously shown difficulties with respect to swelling, high chemical reactivity with oxygen, and the need for special equipment needed for the solvent-based development, NTI photoresists (PR) typically exhibit stronger adhesion to silicon than that of positive tone photoresists (a characteristic that helps mitigate pattern collapse). We will provide suggestions on how to improve the image quality, as well as the resulting defectivity, for desired geometries. This paper will primarily focus on the full litho process optimization and demonstrate repeatable, and manufacturable critical dimension uniformity (CDU), and defectivity optimization for trench and via structures.

Paper Details

Date Published: 15 April 2011
PDF: 12 pages
Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 79720M (15 April 2011); doi: 10.1117/12.879719
Show Author Affiliations
Jason Cantone, Tokyo Electron Technology Ctr., America, LLC (United States)
Karen Petrillo, IBM Corp. (United States)
Yongan Xu, IBM Corp. (United States)
Guillaume Landie, STMicroelectronics (United States)
Shinichiro Kawakami, Tokyo Electron Technology Ctr., America, LLC (United States)
Shannon Dunn, Tokyo Electron Technology Ctr., America, LLC (United States)
Matt Colburn, IBM Corp. (United States)

Published in SPIE Proceedings Vol. 7972:
Advances in Resist Materials and Processing Technology XXVIII
Robert D. Allen; Mark H. Somervell, Editor(s)

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