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Proceedings Paper

Applicability of global source mask optimization to 22/20nm node and beyond
Author(s): Kehan Tian; Moutaz Fakhry; Aasutosh Dave; Alexander Tritchkov; Jaione Tirapu-Azpiroz; Alan E. Rosenbluth; David Melville; Masaharu Sakamoto; Tadanobu Inoue; Scott Mansfield; Alexander Wei; Young Kim; Bruce Durgan; Kostas Adam; Gabriel Berger; Gandharv Bhatara; Jason Meiring; Henning Haffner; Byung-Sung Kim
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Paper Abstract

Source-mask optimization (SMO) in optical lithography has in recent years been the subject of increased exploration as an enabler of 22/20nm and beyond technology nodes [1-6]. It has been shown that intensive optimization of the fundamental degrees of freedom in the optical system allows for the creation of non-intuitive solutions in both the source and mask, which yields improved lithographic performance. This paper will demonstrate the value of SMO software in resolution enhancement techniques (RETs). Major benefits of SMO include improved through-pitch performance, the possibility of avoiding double exposure, and superior performance on two dimensional (2D) features. The benefits from only optimized source, only optimized mask, and both source and mask optimized together will be demonstrated. Furthermore, we leverage the benefits from intensively optimized masks to solve large array problems in memory use models (MUMs). Mask synthesis and data prep flows were developed to incorporate the usage of SMO, including both RETs and MUMs, in several critical layers during 22/20nm technology node development. Experimental assessment will be presented to demonstrate the benefits achieved by using SMO during 22/20nm node development.

Paper Details

Date Published: 22 March 2011
PDF: 12 pages
Proc. SPIE 7973, Optical Microlithography XXIV, 79730C (22 March 2011); doi: 10.1117/12.879703
Show Author Affiliations
Kehan Tian, IBM Corp. (United States)
Moutaz Fakhry, Mentor Graphics Corp. (United States)
Aasutosh Dave, Mentor Graphics Corp. (United States)
Alexander Tritchkov, Mentor Graphics Corp. (United States)
Jaione Tirapu-Azpiroz, IBM Corp. (United States)
Alan E. Rosenbluth, IBM Thomas J. Watson Research Ctr. (United States)
David Melville, IBM Thomas J. Watson Research Ctr. (United States)
Masaharu Sakamoto, IBM Research, Tokyo (Japan)
Tadanobu Inoue, IBM Research, Tokyo (Japan)
Scott Mansfield, IBM Thomas J. Watson Research Ctr. (United States)
Alexander Wei, IBM Thomas J. Watson Research Ctr. (United States)
Young Kim, IBM Thomas J. Watson Research Ctr. (United States)
Bruce Durgan, Mentor Graphics Corp. (United States)
Kostas Adam, Mentor Graphics Corp. (United States)
Gabriel Berger, Mentor Graphics Corp. (United States)
Gandharv Bhatara, Mentor Graphics Corp. (United States)
Jason Meiring, IBM Corp. (United States)
Henning Haffner, Infineon Technologies North America Corp. (United States)
Byung-Sung Kim, SAMSUNG Electronics Co., Ltd. (United States)

Published in SPIE Proceedings Vol. 7973:
Optical Microlithography XXIV
Mircea V. Dusa, Editor(s)

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