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Proceedings Paper

Large scale model of wafer topography effects
Author(s): Nikolay Voznesenskiy; Hans-Jürgen Stock; Bernd Küchler; Hua Song; James Shiely; Lars Bomholt
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Paper Abstract

A technique traditionally used for optical proximity correction (OPC) is extended to include topography proximity effects (TPE). Central to this is a thin-mask imaging model capable of addressing very large areas. This compact model being compatible with traditional fast imaging models used in OPC can then be used in standard correction approaches, compensating for both the optical proximity effects and wafer topography proximity effects. Model origin and model form are considered along with calibration process. Capturing ability and performance of the model are numerically evaluated on a number of test patterns. The performance of the model is close to that of models used in the planar case.

Paper Details

Date Published: 22 March 2011
PDF: 8 pages
Proc. SPIE 7973, Optical Microlithography XXIV, 79732G (22 March 2011); doi: 10.1117/12.879605
Show Author Affiliations
Nikolay Voznesenskiy, Synopsys, Inc. (Estonia)
Hans-Jürgen Stock, Synopsys GmbH (Germany)
Bernd Küchler, Synopsys GmbH (Germany)
Hua Song, Synopsys, Inc. (United States)
James Shiely, Synopsys, Inc. (United States)
Lars Bomholt, Synopsys Switzerland, LLC (Switzerland)


Published in SPIE Proceedings Vol. 7973:
Optical Microlithography XXIV
Mircea V. Dusa, Editor(s)

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