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Proceedings Paper

EUV brightness, spot size, and contamination measurements at the intermediate focus
Author(s): Andrea Z. Giovannini; Oran Morris; Ian Henderson; Samir Ellwi; Reza S. Abhari
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Paper Abstract

The next generation of semi-conductor devices will be manufactured using extreme ultraviolet lithography with a laser-produced plasma as a candidate 13.5nm light source. A primary challenge, particularly for metrology tools, is the stability and the brightness of the generated EUV at the intermediate focus. In the experimental facility at ETH a novel collecting system is studied to optimize brightness and stability, and to avoid contamination after the intermediate focus. Different experimental studies are shown to confirm the design's success for both the EUV beam quality and lack of contamination after the intermediate focus.

Paper Details

Date Published: 8 April 2011
PDF: 5 pages
Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 79692X (8 April 2011); doi: 10.1117/12.879598
Show Author Affiliations
Andrea Z. Giovannini, ETH Zürich (Switzerland)
Oran Morris, ETH Zürich (Switzerland)
Ian Henderson, ETH Zürich (Switzerland)
Samir Ellwi, Adlyte Ltd. (Switzerland)
Reza S. Abhari, ETH Zürich (Switzerland)

Published in SPIE Proceedings Vol. 7969:
Extreme Ultraviolet (EUV) Lithography II
Bruno M. La Fontaine; Patrick P. Naulleau, Editor(s)

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