Share Email Print

Proceedings Paper

A study of quantum lithography for diffraction limit
Author(s): Sang-Kon Kim
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Since the diffraction limit of Rayleigh criterion hardly creates finer features, the development of technologies beyond the diffraction limit is a key merit without the shorter-wavelength source tool. In this paper, nano-phenomena to beat the Rayleigh criterion are described. For quantum lithography, collective behaviour of N-photon entangled states is modeled and simulated to show the effect of photon entangled states to 3-dimensional arbitrary pattern formation.

Paper Details

Date Published: 23 March 2011
PDF: 7 pages
Proc. SPIE 7973, Optical Microlithography XXIV, 79732X (23 March 2011); doi: 10.1117/12.879562
Show Author Affiliations
Sang-Kon Kim, Hanyang Univ. (Korea, Republic of)

Published in SPIE Proceedings Vol. 7973:
Optical Microlithography XXIV
Mircea V. Dusa, Editor(s)

© SPIE. Terms of Use
Back to Top