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Proceedings Paper

A study of quantum lithography for diffraction limit
Author(s): Sang-Kon Kim
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Paper Abstract

Since the diffraction limit of Rayleigh criterion hardly creates finer features, the development of technologies beyond the diffraction limit is a key merit without the shorter-wavelength source tool. In this paper, nano-phenomena to beat the Rayleigh criterion are described. For quantum lithography, collective behaviour of N-photon entangled states is modeled and simulated to show the effect of photon entangled states to 3-dimensional arbitrary pattern formation.

Paper Details

Date Published: 23 March 2011
PDF: 7 pages
Proc. SPIE 7973, Optical Microlithography XXIV, 79732X (23 March 2011); doi: 10.1117/12.879562
Show Author Affiliations
Sang-Kon Kim, Hanyang Univ. (Korea, Republic of)


Published in SPIE Proceedings Vol. 7973:
Optical Microlithography XXIV
Mircea V. Dusa, Editor(s)

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