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Proceedings Paper

Photoresist shrinkage effects at EUV
Author(s): Thomas V. Pistor; Thomas I. Wallow; Christopher N. Anderson; Patrick P. Naulleau
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Paper Abstract

Volumetric mechanical resist shrinkage is shown to cause pattern distortions and profile footing. The shrinkage-induced pattern distortions include corner rounding effects and are essentially the explanation for the corner rounding bias previously observed by Anderson et al.[1]. Two previously-studied mechanisms for resist shrinkage are described: SEM-induced shrinkage and deprotection-induced shrinkage. A third mechanism, shrinkage induced at post-apply bake is also described. Experiments indicate that SEM-induced shrinkage accounts for the vast majority of shrinkage and pattern distortion while deprotection-induced shrinkage, although present, does not contribute significantly to pattern distortion. Shrinkage due to post-apply bake was not observed and thought to be insignificant. A three-dimensional model for shrinkage, based on the standard elastostatic problem in solid mechanics was implemented into a lithography simulator. The model was able to predict two dimensional pattern distortions similar to those observed experimentally.

Paper Details

Date Published: 8 April 2011
PDF: 13 pages
Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 796917 (8 April 2011); doi: 10.1117/12.879554
Show Author Affiliations
Thomas V. Pistor, Panoramic Technology Inc. (United States)
Thomas I. Wallow, GLOBALFOUNDRIES Inc. (United States)
Christopher N. Anderson, Lawrence Berkeley National Lab. (United States)
Patrick P. Naulleau, Lawrence Berkeley National Lab. (United States)


Published in SPIE Proceedings Vol. 7969:
Extreme Ultraviolet (EUV) Lithography II
Bruno M. La Fontaine; Patrick P. Naulleau, Editor(s)

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