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Proceedings Paper

Evaluation of EUV mask defect using blank inspection, patterned mask inspection, and wafer inspection
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Paper Abstract

The key challenge before EUVL is to make defect-free masks, for which it is important to identify the root cause of defects, and it is also necessary to establish suitable critical mask defect size for the production of ULSI devices. Selete has been developing EUV mask infrastructures such as a full-field actinic blank inspection tool and 199nm wavelength patterned mask inspection tool in order to support blank/mask supplier in reducing blank/mask defects which impact on wafer printing. In this paper, by evaluating the printability of programmed phase defects and absorber defects exposed by full-field scanner EUV1, we demonstrate that defect detection sensitivities of ABI (actinic blank inspection) and PI (patterned mask inspection) are higher than that of WI (wafer inspection) in HP32nm. The evaluations were done by comparing the detection sensitivities of full-field actinic blank inspection tool, 199nm wavelength patterned mask inspection tool, and wafer EB inspection tool. And then, based on the native defect analysis of blank/mask, we ascertained that actinic blank inspection and patterned mask inspection developed at Selete, are effective in detecting killer defects both at the main pattern and at light-shield border area.

Paper Details

Date Published: 29 March 2011
PDF: 12 pages
Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 79690J (29 March 2011); doi: 10.1117/12.879551
Show Author Affiliations
Takashi Kamo, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)
Tsuneo Terasawa, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)
Takeshi Yamane, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)
Hiroyuki Shigemura, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)
Noriaki Takagi, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)
Tsuyoshi Amano, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)
Kazuo Tawarayama, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)
Mari Nozoe, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshihiko Tanaka, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)
Osamu Suga, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)
Ichiro Mori, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)


Published in SPIE Proceedings Vol. 7969:
Extreme Ultraviolet (EUV) Lithography II
Bruno M. La Fontaine; Patrick P. Naulleau, Editor(s)

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