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Proceedings Paper

New three-dimensional AFM for CD measurement and sidewall characterization
Author(s): Yueming Hua; Cynthia Buenviaje-Coggins; Yong-ha Lee; Jung-min Lee; Kyung-deuk Ryang; Sang-il Park
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Paper Abstract

As the feature size in the lithography process continuously shrinks, accurate critical dimension (CD) measurement becomes more important. A new 3-dimensional (3D) metrology atomic force microscope (AFM) has been designed on a decoupled XY and Z scanner platform for CD and sidewall characterization. In this decoupled scanner configuration, the sample XY scanner moves the sample and is independent from the Z scanner which only moves the tip. The independent Z scanner allows the tip to be intentionally tilted to easily access the sidewall. This technique has been used to measure photoresist line patterns. The tilted scanner design allows CD measurement at the top, middle, and bottom of lines as well as roughness measurement along the sidewall. The method builds upon the standard AFM tip design resulting in a technique that a) maintains the same resolution as traditional AFM, b) can be used with sharpened tips for increased image resolution, and c) does not suffer from corner inaccessibility from large radius of curvature tips.

Paper Details

Date Published: 20 April 2011
PDF: 6 pages
Proc. SPIE 7971, Metrology, Inspection, and Process Control for Microlithography XXV, 797118 (20 April 2011); doi: 10.1117/12.879545
Show Author Affiliations
Yueming Hua, Park Systems Inc. (United States)
Cynthia Buenviaje-Coggins, Park Systems Inc. (United States)
Yong-ha Lee, Park Systems Corp. (Korea, Republic of)
Jung-min Lee, Park Systems Corp. (Korea, Republic of)
Kyung-deuk Ryang, Park Systems Corp. (Korea, Republic of)
Sang-il Park, Park Systems Corp. (Korea, Republic of)


Published in SPIE Proceedings Vol. 7971:
Metrology, Inspection, and Process Control for Microlithography XXV
Christopher J. Raymond, Editor(s)

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