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Proceedings Paper

Line width roughness control and pattern collapse solutions for EUV patterning
Author(s): Karen Petrillo; George Huang; Dominic Ashworth; Jacque Georger; Liping Ren; K. Y. Cho; Warren Montgomery; Stefan Wurm; Shinichiro Kawakami; Shannon Dunn; Akiteryu Ko
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Paper Abstract

Line width roughness (LWR) control is a critical issue in extreme ultraviolet lithography (EUVL). The difficulty of controlling LWR and the need to minimize it have grown as the sensitivity of materials and resolution in the resist patterning process has improved. Another critical feature that has become difficult to control in EUVL and 22nm half-pitch systems is pattern collapse. The increase of aspect ratio that comes from further scaling promotes the onset of pattern collapse. Both pattern collapse and LWR are easily observed in EUVL and leading-edge ArF immersion lithography. This paper will demonstrate recent gains in LWR control in leading EUV films using track-based processes, etch-based improvements, and the results of combined techniques. Also the use of a newly developed EUV-specific FIRM™ rinse chemistry to reduce pattern collapse will be discussed along with future development activities and industry requirements for both LWR and pattern collapse.

Paper Details

Date Published: 7 April 2011
PDF: 11 pages
Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 796913 (7 April 2011); doi: 10.1117/12.879513
Show Author Affiliations
Karen Petrillo, SEMATECH (United States)
George Huang, SEMATECH (United States)
Dominic Ashworth, SEMATECH (United States)
Jacque Georger, SEMATECH (United States)
Liping Ren, SEMATECH (United States)
K. Y. Cho, SEMATECH (United States)
Warren Montgomery, SEMATECH (United States)
Stefan Wurm, SEMATECH (United States)
Shinichiro Kawakami, TEL Technology Ctr., America, LLC (United States)
Shannon Dunn, Tokyo Electron America, Inc. (United States)
Akiteryu Ko, TEL Technology Ctr., America, LLC (United States)


Published in SPIE Proceedings Vol. 7969:
Extreme Ultraviolet (EUV) Lithography II
Bruno M. La Fontaine; Patrick P. Naulleau, Editor(s)

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