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Proceedings Paper

Coefficient of thermal expansion (CTE) in EUV lithography: LER and adhesion improvement
Author(s): Craig Higgins; Charles Settens; Patricia Wolfe; Karen Petrillo; Robert Auger; Richard Matyi; Robert Brainard
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Paper Abstract

Spin-on underlayers are currently being employed by the lithographic industry to improve the imaging performance of EUV resists. In this work, multiple examples have shown improved line-edge roughness (LER) of an open-source resist using new open-source underlayers in comparison to a primed silicon substrate. Additionally, several experiments demonstrate better resist adhesion on underlayers that have lower coefficients of thermal expansion (CTE). Both organic and inorganic underlayers provide better resist LER when their CTE is lower.

Paper Details

Date Published: 16 April 2011
PDF: 12 pages
Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 797211 (16 April 2011); doi: 10.1117/12.879509
Show Author Affiliations
Craig Higgins, College of Nanoscale Science & Engineering, Univ. of Albany (United States)
Charles Settens, College of Nanoscale Science & Engineering, Univ. of Albany (United States)
Patricia Wolfe, College of Nanoscale Science & Engineering, Univ. of Albany (United States)
Karen Petrillo, SEMATECH (United States)
Robert Auger, The Dow Chemical Co. (United States)
Richard Matyi, College of Nanoscale Science & Engineering, Univ. of Albany (United States)
Robert Brainard, College of Nanoscale Science & Engineering, Univ. of Albany (United States)


Published in SPIE Proceedings Vol. 7972:
Advances in Resist Materials and Processing Technology XXVIII
Robert D. Allen; Mark H. Somervell, Editor(s)

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