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Proceedings Paper

Mass spectrometer characterization of reactions in photoresists exposed to extreme ultraviolet radiation
Author(s): Chimaobi Mbanaso; Seth Kruger; Craig Higgins; Yashdeep Khopkar; Alin Antohe; Brian Cardineau; Gregory Denbeaux
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Paper Abstract

The development of resists that meet the requirements for resolution, line edge roughness and sensitivity remains one of the challenges for extreme ultraviolet (EUV) lithography. Two important processes that contribute to the lithographic performance of EUV resists involve the efficient decomposition of a photoacid generator (PAG) to yield a catalytic acid and the subsequent deprotection of the polymer in the resist film. We investigate these processes by monitoring the trends produced by specific masses outgassing from resists following EUV exposure and present our initial results. The resists tested are based on ESCAP polymer and either bis(4-tert-butylphenyl)iodonium perfluoro-1-butanesulfonate or bis(4-tert-butylphenyl)iodonium triflate. The components originating from the PAG were monitored at various EUV exposure doses while the deprotection of the polymer was monitored by baking the resist in vacuum and detecting the cleaved by-product from the polymer with an Extrel quadruple mass spectrometer.

Paper Details

Date Published: 8 April 2011
PDF: 9 pages
Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 79692J (8 April 2011); doi: 10.1117/12.879507
Show Author Affiliations
Chimaobi Mbanaso, Univ. at Albany (United States)
Seth Kruger, Univ. at Albany (United States)
Craig Higgins, Univ. at Albany (United States)
Yashdeep Khopkar, Univ. at Albany (United States)
Alin Antohe, Univ. at Albany (United States)
Brian Cardineau, Univ. at Albany (United States)
Gregory Denbeaux, Univ. at Albany (United States)


Published in SPIE Proceedings Vol. 7969:
Extreme Ultraviolet (EUV) Lithography II
Bruno M. La Fontaine; Patrick P. Naulleau, Editor(s)

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