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Proceedings Paper

Surface morphology of SiO2 coated InP/InGaAs/InGaAsP microstructures following irradiation with the ArF and KrF excimer lasers
Author(s): Neng Liu; Khalid Moumanis; Jan J. Dubowski
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Paper Abstract

Successful fabrication of devices from quantum well-intermixed material requires efficient control of its surface morphology. To address this problem, we have employed atomic force microscopy to study surface morphology of InP/InGaAs/InGaAsP QW microstructure coated with dSiO2 = 50, 150, 190, 243 and 263 nm thick SiO2 films. Both ArF (193 nm) and KrF (248 nm) excimer lasers have been used to irradiate series of samples with up to 400 pulses of fluence 76 to 156 mJ/cm2. The roughness (σRMS) of SiO2 layer after both lasers irradiation and RTA decreases as the pulse number increases. Following RTA, a smoother surface morphology was observed for all irradiated samples. The cap InP layer was found to have a relatively smaller roughness (~ 0.4 nm) due to the protection provided by the SiO2 layer during excimer laser irradiation and high temperature RTA. For samples coated with 50- or 150-nm-thick SiO2 and irradiated by the ArF laser, the blueshift is only obtained when the SiO2 layer was ablated. However, the sample coated with 243-nmthick SiO2 (dSiO2 ≈ λKrF), following the 75-pulse-irradiation with the KrF laser at 124mJ/cm2 and RTA, showed a smooth surface (σRMS = 1.8 nm) and maximum blueshift of 74 nm achieved without removal of the SiO2 layer.

Paper Details

Date Published: 21 February 2011
PDF: 12 pages
Proc. SPIE 7920, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XVI, 79200C (21 February 2011); doi: 10.1117/12.879453
Show Author Affiliations
Neng Liu, Univ. de Sherbrooke (Canada)
Khalid Moumanis, Univ. de Sherbrooke (Canada)
Jan J. Dubowski, Univ. de Sherbrooke (Canada)


Published in SPIE Proceedings Vol. 7920:
Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XVI
Bo Gu; Guido Hennig; Xianfan Xu; Hiroyuki Niino, Editor(s)

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