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Proceedings Paper

Systematic studies on reactive ion etch-induced deformations of organic underlayers
Author(s): Martin Glodde; Sebastian Engelmann; Michael Guillorn; Sivananda Kanakasabapathy; Erin Mclellan; Chiew-Seng Koay; Yunpeng Yin; Muthumanickam Sankarapandian; John C. Arnold; Karen Petrillo; Markus Brink; Hiroyuki Miyazoe; E. Anuja de Silva; Hakeem Yusuff; Kwang-sub Yoon; Yayi Wei; Chung-hsi J. Wu; P. Rao Varanasi
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Paper Abstract

Underlayers (UL), such as organic planarizing layers (OPLs) or spin-on carbon (SOC) layers, play a very important role in various integration schemes of chip manufacturing. One function of OPLs is to fill in pre-existing patterns on the substrate, such as previously patterned vias, to enable lithographic patterning of the next level. More importantly, OPL resistance to reactive ion etch (RIE) processes used to etch silicon-containing materials is essential for the successful pattern transfer from the resist into the substrate. Typically, the pattern is first transferred into the OPL through a two-step RIE sequence, followed by the transfer into the substrate by a fluorine-containing RIE step that leaves the OPL pattern mainly intact. However, when the line/space patterns are scaled down to line widths below 35 nm, it was found that this last RIE step induces severe pattern deformation ("wiggling") of the OPL material, which ultimately prevents the successful pattern transfer into the substrate. In this work, we developed an efficient process to evaluate OPL materials with respect to their pattern transfer performance. This allowed us to systematically study material, substrate and etch process parameters and draw conclusions about how changes in these parameters may improve the overall pattern transfer margin.

Paper Details

Date Published: 15 April 2011
PDF: 8 pages
Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 797216 (15 April 2011); doi: 10.1117/12.879442
Show Author Affiliations
Martin Glodde, IBM Thomas J. Watson Research Ctr. (United States)
Sebastian Engelmann, IBM Thomas J. Watson Research Ctr. (United States)
Michael Guillorn, IBM Thomas J. Watson Research Ctr. (United States)
Sivananda Kanakasabapathy, IBM Corp. (United States)
Erin Mclellan, IBM Corp. (United States)
Chiew-Seng Koay, IBM Corp. (United States)
Yunpeng Yin, IBM Corp. (United States)
Muthumanickam Sankarapandian, IBM Corp. (United States)
John C. Arnold, IBM Corp. (United States)
Karen Petrillo, IBM Corp. (United States)
Markus Brink, IBM Thomas J. Watson Research Ctr. (United States)
Hiroyuki Miyazoe, IBM Thomas J. Watson Research Ctr. (United States)
E. Anuja de Silva, GLOBALFOUNDRIES Inc. (United States)
Hakeem Yusuff, IBM Systems and Technology Group (United States)
Kwang-sub Yoon, SAMSUNG Electronics Co., Ltd. (United States)
Yayi Wei, GLOBALFOUNDRIES Inc. (United States)
Chung-hsi J. Wu, IBM Corp. (United States)
P. Rao Varanasi, IBM Corp. (United States)


Published in SPIE Proceedings Vol. 7972:
Advances in Resist Materials and Processing Technology XXVIII
Robert D. Allen; Mark H. Somervell, Editor(s)

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