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Proceedings Paper

Optical far field measurements applied to microroughness determination of periodic microelectronic structures
Author(s): Alexandre Vauselle; Philippe Maillot; Gaëlle Georges; Carole Deumié
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Paper Abstract

With device size reduction, variability induced by local micro roughness is becoming less and less negligible in terms of statistical control of critical dimensions (CD). We applied a recent approach developed at Fresnel Institute for the determination of micro roughness on periodic structures through optical far field characterization using an angle resolved scatterometer. Structure periodicity affects the diffraction orders, while roughness signature is mainly found between diffraction orders. Theoretical simulation was performed using two in-house computer codes based on differential method and on first order approximation. We will review the theoretical approach and show roughness data derived from measurement on glass gratings as well as poly silicon gate type structures.

Paper Details

Date Published: 20 April 2011
PDF: 11 pages
Proc. SPIE 7971, Metrology, Inspection, and Process Control for Microlithography XXV, 797112 (20 April 2011); doi: 10.1117/12.879436
Show Author Affiliations
Alexandre Vauselle, Institut Fresnel, CNRS, Aix-Marseille Univ. (France)
STMicroelectronics (France)
Philippe Maillot, STMicroelectronics (France)
Gaëlle Georges, Institut Fresnel, CNRS, Aix-Marseille Univ. (France)
Carole Deumié, Institut Fresnel, CNRS, Aix-Marseille Univ. (France)

Published in SPIE Proceedings Vol. 7971:
Metrology, Inspection, and Process Control for Microlithography XXV
Christopher J. Raymond, Editor(s)

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