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Proceedings Paper

Particle detection on flat surfaces
Author(s): Jacques van der Donck; Rob Snel; Jetske Stortelder; Alfred Abutan; Sjoerd Oostrom; Sander van Reek; Bert van der Zwan; Peter van der Walle
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Paper Abstract

Since 2006 EUV Lithographic tools have been available for testing purposes giving a boost to the development of fab infrastructure for EUV masks. The absence of a pellicle makes the EUV reticles extremely vulnerable to particles. Therefore, the fab infrastructure for masks must meet very strict particle requirements. It is expected that all new equipment must be qualified on particles before it can be put into operation. This qualification requirement increases the need for a low cost method for particle detection on mask substrates. TNO developed its fourth generation particle scanner, the Rapid Nano. This scanner is capable of detecting nanometer sized particles on flat surfaces. The particle detection is based on dark field imaging techniques and fast image processing. The tool was designed for detection of a single added particle in a handling experiment over a reticle sized substrate. Therefore, the Rapid Nano is very suitable for the validation of particle cleanliness of equipment. During the measurement, the substrate is protected against particle contamination by placing it in a protective environment. This environment shields the substrate from all possible contamination source in the Nano Rapid (stages, elevator, cabling). The imaging takes place through a window in the protective cover. The geometry of the protective environment enables large flexibility in substrate shape and size. Particles can be detected on substrates varying from 152 x 152 mm mask substrates to wafers up to 200 mm. PSL particles of 50 nm were detected with signal noise ratio of 26. Larger particles had higher signal noise ratios. By individually linking particles in two measurements the addition of particles can be detected. These results show that the Rapid Nano is capable of detecting particles of 50 nm and larger of a full reticle substrate.

Paper Details

Date Published: 8 April 2011
PDF: 7 pages
Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 79691S (8 April 2011); doi: 10.1117/12.879435
Show Author Affiliations
Jacques van der Donck, TNO (Netherlands)
Rob Snel, TNO (Netherlands)
Jetske Stortelder, TNO (Netherlands)
Alfred Abutan, TNO (Netherlands)
Sjoerd Oostrom, TNO (Netherlands)
Sander van Reek, TNO (Netherlands)
Bert van der Zwan, TNO (Netherlands)
Peter van der Walle, TNO (Netherlands)

Published in SPIE Proceedings Vol. 7969:
Extreme Ultraviolet (EUV) Lithography II
Bruno M. La Fontaine; Patrick P. Naulleau, Editor(s)

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