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Proceedings Paper

EUV processing investigation on state of the art coater/developer system
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Paper Abstract

In order to further understand the processing sensitivities of the EUV resist process, TEL and imec have continued their collaborative efforts. For this work, TEL has delivered and installed the state of the art, CLEAN TRACK™ LITHIUS Pro™ -EUV coater/developer to the newly expanded imec 300mm cleanroom in Leuven, Belgium. The exposures detailed in this investigation were performed off-line to the ASML EUV Alpha Demo Tool (ADT) as well as on the inline ADT cluster with CLEAN TRACK™ ACT™ 12 coater/developer. As EUV feature sizes are reduced, is it apparent that there is a need for more precise processing control, as can be demonstrated in the LITHIUS Pro™ -EUV. In previous work from this collaboration1, initial investigations from the ACT™ 12 work showed reasonable results; however, certainly hardware and processing improvements are necessary for manufacturing quality processing performance. This work continues the investigation into CDU and defectivity performance, as well as improvements to the process with novel techniques such as advanced defect reduction (ADR), pattern collapse mitigation with FIRM™Extreme and resolution improvement with tetrabutylammoniumhydroxide (TBAH).

Paper Details

Date Published: 8 April 2011
PDF: 9 pages
Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 796937 (8 April 2011); doi: 10.1117/12.879406
Show Author Affiliations
H. Shite, Tokyo Electron Kyushu Ltd. (Japan)
N. Bradon, Tokyo Electron Europe Ltd. (United Kingdom)
T. Shimoaoki, Tokyo Electron Kyushu Ltd. (Japan)
S. Kobayashi, Tokyo Electron Kyushu Ltd. (Japan)
K. Nafus, Tokyo Electron Kyushu Ltd. (Japan)
H. Kosugi, Tokyo Electron Kyushu Ltd. (Japan)
P. Foubert, IMEC (Belgium)
J. Hermans, IMEC (Belgium)
E. Hendrickx, IMEC (Belgium)
M. Goethals, IMEC (Belgium)
R. Gronheid, IMEC (Belgium)
C. Jehoul, IMEC (Belgium)


Published in SPIE Proceedings Vol. 7969:
Extreme Ultraviolet (EUV) Lithography II
Bruno M. La Fontaine; Patrick P. Naulleau, Editor(s)

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