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Proceedings Paper

Radiation damage formation and annealing in GaN and ZnO
Author(s): K. Lorenz; M. Peres; N. Franco; J. G. Marques; S. M. C. Miranda; S. Magalhães; T. Monteiro; W. Wesch; E. Alves; E. Wendler
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Paper Abstract

The radiation damage formation upon low temperature ion implantation and neutron irradiation has been compared for GaN and ZnO. Both materials exhibit strong dynamic annealing effects during implantation, even at 15 K, leading to high amorphisation thresholds. The damage build-up with fluence was found to proceed in a similar way for GaN and ZnO, both showing two saturation regimes below the amorphisation level where, over wide fluence regions, the damage level increases only very slowly. For low fluences the damage accumulation rate is similar for both materials. For higher fluences, on the other hand, GaN shows considerably higher damage levels and finally collapses into an amorphous structure while ZnO remains single crystalline up to the highest fluence of 7×1016 Ar/cm2. Neutron irradiation produces similar defects as ion implantation but within the entire sample while the defect density is much lower. The main effect of irradiation on the structural properties of GaN is an expansion of the c-lattice parameter. Optical properties are significantly deteriorated after irradiation and only recover partially after annealing. ZnO does not suffer such a pronounced change of the lattice parameters but reveals a strong deterioration of the surface, possibly due to blistering and exfoliation. At the same time the optical properties are less affected than for GaN. The near band edge emission is partly quenched but recovers to a large extend after annealing while broad defect bands are observed below the bandgap for irradiated samples, before and after annealing.

Paper Details

Date Published: 14 March 2011
PDF: 14 pages
Proc. SPIE 7940, Oxide-based Materials and Devices II, 79400O (14 March 2011); doi: 10.1117/12.879402
Show Author Affiliations
K. Lorenz, Instituto Tecnológico e Nuclear (Portugal)
Univ. de Lisboa (Portugal)
M. Peres, Univ. de Aveiro (Portugal)
N. Franco, Instituto Tecnológico e Nuclear (Portugal)
Univ. de Lisboa (Portugal)
J. G. Marques, Instituto Tecnológico e Nuclear (Portugal)
Univ. de Lisboa (Portugal)
S. M. C. Miranda, Instituto Tecnológico e Nuclear (Portugal)
S. Magalhães, Instituto Tecnológico e Nuclear (Portugal)
Univ. de Aveiro (Portugal)
T. Monteiro, Univ. de Aveiro (Portugal)
W. Wesch, Friedrich-Schiller-Univ. Jena (Germany)
E. Alves, Instituto Tecnológico e Nuclear (Portugal)
Univ. de Lisboa (Portugal)
E. Wendler, Friedrich-Schiller-Univ. Jena (Germany)

Published in SPIE Proceedings Vol. 7940:
Oxide-based Materials and Devices II
Ferechteh Hosseini Teherani; David C. Look; David J. Rogers, Editor(s)

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