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Proceedings Paper

Enabling the 22nm node via grazing incidence collectors integrated into the DPP source for EUVL HVM
Author(s): G. Bianucci; A. Bragheri; G. L. Cassol; R. Ghislanzoni; R. Mazzoleni; F. E. Zocchi
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Paper Abstract

Media Lario Technologies (MLT) has enabled the Extreme Ultraviolet Lithography (EUVL) roadmap with its grazing incidence collectors installed in all DPP sources since 2006. Furthermore, with several 100 WIF capable production grazing incidence collectors shipped in 2010, MLT is ready to support the start of High Volume Manufacturing (HVM). With a point-source collection efficiency of 25% and 6 kW power loading capability, the 9-shell collector design is capable of delivering 100 W in-band EUV power through the intermediate focus aperture. The customized reflective layer and the debris mitigation technology enable the 1-year lifetime objective under full production operating conditions. Integration of the grazing incidence collector in XTREME technologies' (XT) DPP source attached to ASML's NXE:3100 scanner has provided initial validation of the optical, thermal, and lifetime design objectives. In full HVM regime, we anticipate that the collector power loading will progressively reach 20 kW to enable 500 W inband EUV peak power at intermediate focus. We have started the development of a thermal management design maintaining the current optical stability with a collector power loading of 30 kW, thus meeting the aggressive HVM requirements.

Paper Details

Date Published: 29 March 2011
PDF: 9 pages
Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 79690B (29 March 2011); doi: 10.1117/12.879396
Show Author Affiliations
G. Bianucci, Media Lario Technologies S.r.l. (Italy)
A. Bragheri, Media Lario Technologies S.r.l. (Italy)
G. L. Cassol, Media Lario Technologies S.r.l. (Italy)
R. Ghislanzoni, Media Lario Technologies S.r.l. (Italy)
R. Mazzoleni, Media Lario Technologies S.r.l. (Italy)
F. E. Zocchi, Media Lario Technologies S.r.l. (Italy)

Published in SPIE Proceedings Vol. 7969:
Extreme Ultraviolet (EUV) Lithography II
Bruno M. La Fontaine; Patrick P. Naulleau, Editor(s)

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