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Proceedings Paper

Tin DPP source collector module (SoCoMo) ready for integration into Beta scanner
Author(s): Masaki Yoshioka; Yusuke Teramoto; Jeroen Jonkers; Max C. Schürmann; Rolf Apetz; Volker Kilian; Marc Corthout
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Paper Abstract

As the traditional techniques used in optical photolithography at 193 nm are running out of steam and are becoming prohibitively expensive, a new cost-effective, high power EUV (extreme ultra-violet) light source is needed to enable high volume manufacturing (HVM) of ever shrinking semiconductor devices. XTREME technologies GmbH and EUVA have jointly developed tin based LDP (Laser assisted Discharge Plasma) source systems during the last two years for the integration of such sources into scanners of the latest and future generations. The goals of the consortium are 1) to solve the wavelength gap - the growing gap between the printed critical dimensions (CD) driven by Moore's Law and the printing capability of lithographic exposure tools constrained by the wavelength of the light source - and 2) to enable the timely availability of EUV light sources for high volume manufacturing. A first Beta EUV Source Collector Module (SoCoMo) containing a tin based laser assisted discharge plasma source is in operation at XTREME technologies since September 2009. Alongside the power increase, the main focus of work emphasizes on the improvement of uptime and reliability of the system leveraging years of experience with the Alpha sources. Over the past period, a cumulated EUV dose of several hundreds of Mega Joules of EUV light has been generated at the intermediate focus, capable to expose more than a hundred thousand wafers with the right dose stability to create well-yielding transistors. During the last months, the entire system achieved an uptime - calculated according to the SEMI standards - of up to 80 %. This new SoCoMo has been successfully integrated and tested with a pre-production scanner and is now ready for first wafer exposures at a customer's site. In this paper we will emphasize what our innovative concept is against old type of Xe DPP and we will present the recent status of this system like power level, uptime and lifetime of components as well. In the second part of the paper the EUV source developments for the HVM phase are described. The basic engineering challenges are thermal scaling of the source and debris mitigation. Feasibility of the performance can be demonstrated by experimental results after the implementation into the beta system. The feasibility of further efficiency improvement, required for the HVM phase, will also be shown. The objectives of the HVM roadmap will be achieved through evolutionary steps from the current Beta products.

Paper Details

Date Published: 7 April 2011
PDF: 9 pages
Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 79691G (7 April 2011); doi: 10.1117/12.879386
Show Author Affiliations
Masaki Yoshioka, XTREME technologies GmbH (Germany)
Yusuke Teramoto, EUVA (Japan)
Jeroen Jonkers, XTREME technologies GmbH (Germany)
Max C. Schürmann, XTREME technologies GmbH (Germany)
Rolf Apetz, XTREME technologies GmbH (Germany)
Volker Kilian, XTREME technologies GmbH (Germany)
Marc Corthout, XTREME technologies GmbH (Germany)


Published in SPIE Proceedings Vol. 7969:
Extreme Ultraviolet (EUV) Lithography II
Bruno M. La Fontaine; Patrick P. Naulleau, Editor(s)

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