Share Email Print
cover

Proceedings Paper

Development of an inorganic nanoparticle photoresist for EUV, e-beam, and 193nm lithography
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

We have developed a transparent, high refractive index inorganic photoresist with significantly higher etch resistance than even the most robust polymeric resist. As feature sizes continue to decrease, film thickness must be reduced in order to prevent pattern collapse. Normally thinner films prevent sufficient pattern transfer during the etch process, creating the need for a hardmask, thus increasing production cost. Compared to PHOST, we have shown over 10 times better etch resistance. Organic photo-crosslinkable ligands have been attached to a hafnium oxide nanoparticle core to create an imageable photoresist. This resist has shown superior resolution with both E-beam and 193 nm lithography, producing sub-50 nm patterns. In addition to improved etch resistance, the inorganic photoresist exhibits a high refractive index, increasing the depth of focus (DOF). The nanoparticle size of ~ 1-2 nm has the potential to reduce line edge roughness (LER).

Paper Details

Date Published: 15 April 2011
PDF: 6 pages
Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 79721C (15 April 2011); doi: 10.1117/12.879385
Show Author Affiliations
Marie Krysak, Cornell Univ. (United States)
Markos Trikeriotis, Cornell Univ. (United States)
Evan Schwartz, Cornell Univ. (United States)
Neal Lafferty, Rochester Institute of Technology (United States)
Peng Xie, Rochester Institute of Technology (United States)
Bruce Smith, Rochester Institute of Technology (United States)
Paul Zimmerman, Intel Corp. (United States)
Warren Montgomery, SEMATECH (United States)
Emmanuel Giannelis, Cornell Univ. (United States)
Christopher K. Ober, Cornell Univ. (United States)


Published in SPIE Proceedings Vol. 7972:
Advances in Resist Materials and Processing Technology XXVIII
Robert D. Allen; Mark H. Somervell, Editor(s)

© SPIE. Terms of Use
Back to Top