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Proceedings Paper

Printability and inspectability of defects on the EUV mask for sub-32nm half pitch HVM application
Author(s): Sungmin Huh; In-Yong Kang; Sang-Hyun Kim; Hwan-seok Seo; Dongwan Kim; Jooon Park; Seong-Sue Kim; Han-Ku Cho; Kenneth Goldberg; Iacopo Mochi; Tsutomu Shoki; Gregg Inderhees
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Paper Abstract

The availability of defect-free masks remains one of the key challenges for inserting extreme ultraviolet lithography (EUVL) into high volume manufacturing, yet little data is available for understanding native defects on real masks. In this paper, a full field EUV mask is fabricated to see the printability of various defects on the mask. Programmed pit defect shows that minimum printable size of pits could be 17 nm of SEVD from the AIT. However 23.1nm in SEVD is printable from the EUV ADT. Defect printability and identification of its source along from blank fabrication to mask fabrication were studied using various inspection tools. Capture ratio of smallest printable defects was improved to 80% using optimized stack of metrical on wafer and state-of-art wafer inspection tool. Requirement of defect mitigation technology using fiducial mark are defined.

Paper Details

Date Published: 26 March 2011
PDF: 9 pages
Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 796902 (26 March 2011); doi: 10.1117/12.879384
Show Author Affiliations
Sungmin Huh, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
In-Yong Kang, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Sang-Hyun Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Hwan-seok Seo, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Dongwan Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Jooon Park, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Seong-Sue Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Han-Ku Cho, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Kenneth Goldberg, Lawrence Berkeley National Lab. (United States)
Iacopo Mochi, Lawrence Berkeley National Lab. (United States)
Tsutomu Shoki, HOYA Corp. (Japan)
Gregg Inderhees, KLA-Tencor Corp. (United States)


Published in SPIE Proceedings Vol. 7969:
Extreme Ultraviolet (EUV) Lithography II
Bruno M. La Fontaine; Patrick P. Naulleau, Editor(s)

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