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Paper Abstract
A new company in the lithography world, SMEE has developed and produced a prototype wafer exposure tool, with an
ArF laser light source. This tool, SMEE SSA600/10, adopted step and scan technology to obtain a large exposure filed
and to average optical aberrations for a scanned image to improve CD uniformity and reduce distortion. The maximum
numerical aperture is 0.75 and the maximum coherence factor of illumination system is 0.88. The illuminator provides
continuously variable conventional and off-axis illumination modes to improve resolution. In this paper, the
configuration of the exposure tool is presented and design concepts of the scanner are introduced. We show actual test
data such as synchronization accuracy, focus and leveling repeatability, dynamic imaging performance (resolution, depth
of focus) and overlay.
Paper Details
Date Published: 22 March 2011
PDF: 9 pages
Proc. SPIE 7973, Optical Microlithography XXIV, 79732D (22 March 2011); doi: 10.1117/12.879376
Published in SPIE Proceedings Vol. 7973:
Optical Microlithography XXIV
Mircea V. Dusa, Editor(s)
PDF: 9 pages
Proc. SPIE 7973, Optical Microlithography XXIV, 79732D (22 March 2011); doi: 10.1117/12.879376
Show Author Affiliations
Lifeng Duan, Shanghai Micro Electronics Equipment Co., Ltd. (China)
Jianrui Cheng, Shanghai Micro Electronics Equipment Co., Ltd. (China)
Jianrui Cheng, Shanghai Micro Electronics Equipment Co., Ltd. (China)
Gang Sun, Shanghai Micro Electronics Equipment Co., Ltd. (China)
Yonghui Chen, Shanghai Micro Electronics Equipment Co., Ltd. (China)
Yonghui Chen, Shanghai Micro Electronics Equipment Co., Ltd. (China)
Published in SPIE Proceedings Vol. 7973:
Optical Microlithography XXIV
Mircea V. Dusa, Editor(s)
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