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Proceedings Paper

Performance of a bilinear photoresist model
Author(s): Anatoly Burov; Min Shi; Jiang Yan; Wenfeng Sun
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Paper Abstract

A bilinear photoresist model extends the approach of a convolution kernel-style process models to include second-order effects. Using effective acid concentration after post-exposure bake as the latent image we approximate the reactiondiffusion operator as a second order Volterra series. The series expansion is carried out for a calibrated photoresist model. Both the linear kernel and the Bilinear Resist Transfer Function (BRTF) are estimated at the same time using a set of pre-computed training images. The linear kernels of the Volterra series are found to have a Gaussian behavior, while the shape of BRTF appears to vary greatly depending on exact details of photoresist composition. Accuracy of the estimated photoresist operator is studied using process window matching at multiple sets of optical conditions. The estimated operator is applied to a set of validation aerial images and the resultant CD values are compared against full photoresist simulation. The bilinear model performance is found to be within 1 nm of the full photoresist model across the full range of dose and focus values.

Paper Details

Date Published: 5 April 2011
PDF: 7 pages
Proc. SPIE 7973, Optical Microlithography XXIV, 79732V (5 April 2011); doi: 10.1117/12.879369
Show Author Affiliations
Anatoly Burov, Shanghai Micro Electronics Equipment Co., Ltd. (China)
Min Shi, Shanghai Micro Electronics Equipment Co., Ltd. (China)
Jiang Yan, Shanghai Micro Electronics Equipment Co., Ltd. (China)
Wenfeng Sun, Shanghai Micro Electronics Equipment Co., Ltd. (China)


Published in SPIE Proceedings Vol. 7973:
Optical Microlithography XXIV
Mircea V. Dusa, Editor(s)

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