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Proceedings Paper

Fabrication of hole pattern for position-controlled MOVPE-grown GaN nanorods with highly precise nanoimprint technology
Author(s): Torbjörn Eriksson; Ki-Dong Lee; Babak Heidari; Patrick Rode; Werner Bergbauer; Martin Mandl; Christopher Kölper; Martin Strassburg
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Paper Abstract

Nano Imprint Lithography (NIL) is a promising technology that combines low costs with high throughput for fabrication of sub 100 nm scale features. One of the first application areas in which NIL is used is manufacturing of various types of LED's. The wafers used for producing LED's are typically III/V semiconductor materials grown with epitaxial processes. These types of substrates suffer from growth defects like hexagonal spikes, vpits, waferbowing, atomic steps and surface corrugations on a scale of few 10 μm or even large islands of irregularities. The mentioned irregularities are particularly disturbing when NIL based processes are utilized to create patterns onto the wafer surface. The nanopatterns created by NIL can be applied to control metal organic vapour phase epitaxy (MOVPE) growth of GaN nanorods. This paper will show that NIL is an excellent technology to produce nanopatterned GaN substrates highly suitable to grow defect free arrays of positioncontrolled nanorods for ultrahigh brightness LED applications.

Paper Details

Date Published: 4 April 2011
PDF: 9 pages
Proc. SPIE 7970, Alternative Lithographic Technologies III, 797015 (4 April 2011); doi: 10.1117/12.879368
Show Author Affiliations
Torbjörn Eriksson, Obducat Technologies AB (Sweden)
Ki-Dong Lee, Obducat Technologies AB (Sweden)
Babak Heidari, Obducat Technologies AB (Sweden)
Patrick Rode, Osram Opto Semiconductors GmbH (Germany)
Werner Bergbauer, Osram Opto Semiconductors GmbH (Germany)
Martin Mandl, Osram Opto Semiconductors GmbH (Germany)
Christopher Kölper, Osram Opto Semiconductors GmbH (Germany)
Martin Strassburg, Osram Opto Semiconductors GmbH (Germany)


Published in SPIE Proceedings Vol. 7970:
Alternative Lithographic Technologies III
Daniel J. C. Herr, Editor(s)

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