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Proceedings Paper

Fundamental study on reaction mechanisms in chemically amplified extreme ultraviolet resists by using 61nm free-electron laser
Author(s): Kazumasa Okamoto; Takahiro Kozawa; Takaki Hatsui; Yasuharu Tajima; Keita Oikawa; Mitsuru Nagasono; Takashi Kameshima; Tadashi Togashi; Kensuke Tono; Makina Yabashi; Hiroaki Kimura; Yasunori Senba; Haruhiko Ohashi; Takashi Sumiyoshi
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Paper Abstract

For chemically amplified EUV resists, secondary electrons derived from ionization events play a critical role in the sensitization of acid generators. In this study, we show the dependence of acid generation efficiency on dose rate (fluence per pulse duration) by using 61 nm free-electron laser (FEL) light irradiation. The wavelength of 61 nm (20.3 eV) is applied because single incident photon induces only single ionization event, in contrast to the 13.4 nm EUV photon that induces 4.2 ionization events on average. The acid yield efficiency has enhances with decreasing the dose rate. It is suggested that high density ionization enhances the multiple spur effect.

Paper Details

Date Published: 15 April 2011
PDF: 6 pages
Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 797217 (15 April 2011); doi: 10.1117/12.879358
Show Author Affiliations
Kazumasa Okamoto, Hokkaido Univ. (Japan)
RIKEN (Japan)
Takahiro Kozawa, Osaka Univ. (Japan)
RIKEN (Japan)
Takaki Hatsui, RIKEN (Japan)
Yasuharu Tajima, Hokkaido Univ. (Japan)
RIKEN (Japan)
Keita Oikawa, Hokkaido Univ. (Japan)
Mitsuru Nagasono, RIKEN (Japan)
Takashi Kameshima, RIKEN (Japan)
Tadashi Togashi, RIKEN (Japan)
JASRI (Japan)
Kensuke Tono, RIKEN (Japan)
Makina Yabashi, RIKEN (Japan)
Hiroaki Kimura, RIKEN (Japan)
JASRI (Japan)
Yasunori Senba, JASRI (Japan)
Haruhiko Ohashi, RIKEN (Japan)
Takashi Sumiyoshi, Hokkaido Univ. (Japan)


Published in SPIE Proceedings Vol. 7972:
Advances in Resist Materials and Processing Technology XXVIII
Robert D. Allen; Mark H. Somervell, Editor(s)

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