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Proceedings Paper

Development of new Si-contained hardmask for tri-layer process
Author(s): Makoto Nakajima; Yuta Kanno; Wataru Shibayama; Satoshi Takeda; Masakazu Kato; Takashi Matsumoto
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Paper Abstract

In the advanced semiconductor lithography process, the tri-layer process have been used for the essential technique{photoresist/ silicon contained hard mask (Si-HM) / spin on carbon hard mask (SOC)}(Figure 1). Tri-layer process was introduced and applied to the L/S and C/H patterning in the ArF dry and ArF immersion lithography process. Therefore, Si-HM should have the wider compatibility with different photoresist. In this paper, we investigate the interface behavior between photoresist and Si-HM in detail and get the new Si-HM to have the wider compatibility with different photoresist.

Paper Details

Date Published: 15 April 2011
PDF: 8 pages
Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 797225 (15 April 2011); doi: 10.1117/12.879357
Show Author Affiliations
Makoto Nakajima, Nissan Chemical Industries, Ltd. (Japan)
Yuta Kanno, Nissan Chemical Industries, Ltd. (Japan)
Wataru Shibayama, Nissan Chemical Industries, Ltd. (Japan)
Satoshi Takeda, Nissan Chemical Industries, Ltd. (Japan)
Masakazu Kato, Nissan Chemical Industries, Ltd. (Japan)
Takashi Matsumoto, Nissan Chemical Industries, Ltd. (Japan)


Published in SPIE Proceedings Vol. 7972:
Advances in Resist Materials and Processing Technology XXVIII
Robert D. Allen; Mark H. Somervell, Editor(s)

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