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Proceedings Paper

Manufacturability of 2x-nm devices with EUV tool
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Paper Abstract

Due to the promising development status of EUVL as a practical lithography technology for the 2x-nm node, we are continuing to evaluate its process liability using the EUV1 at Selete, which has an Off-Axis illumination capability. The resolution limit of the EUV1 for L&S patterns is currently 18 nm for dipole illumination, and 16 nm for aggressive dipole illumination. This study examined the critical points of EUVL for device manufacturing through wafer processes. The yield obtained from electrical measurements indicates the maturity of the technology, including the resist process, the tool, and the mask. Optimization of the resist and RIE processes significantly improved the yield. The final yields obtained from electrical measurements were 100% for hp 30 nm, 70% for hp 28 nm, and 40% for hp 26 nm. These results demonstrate EUV lithography to be a practical technology that is now suitable for 2x nm semiconductor manufacture.

Paper Details

Date Published: 8 April 2011
PDF: 7 pages
Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 79691L (8 April 2011); doi: 10.1117/12.879333
Show Author Affiliations
Kazuo Tawarayama, Semiconductor Leading Edge Technologies, Inc. (Japan)
Yumi Nakajima, Toshiba Corp. (Japan)
Suigen Kyoh, Toshiba Corp. (Japan)
Hajime Aoyama, Semiconductor Leading Edge Technologies, Inc. (Japan)
Kentaro Matsunaga, Semiconductor Leading Edge Technologies, Inc. (Japan)
Shunko Magoshi, Semiconductor Leading Edge Technologies, Inc. (Japan)
Satoshi Tanaka, Toshiba Corp. (Japan)
Yumi Hayashi, Toshiba Corp. (Japan)
Ichiro Mori, Semiconductor Leading Edge Technologies, Inc. (Japan)

Published in SPIE Proceedings Vol. 7969:
Extreme Ultraviolet (EUV) Lithography II
Bruno M. La Fontaine; Patrick P. Naulleau, Editor(s)

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