Share Email Print
cover

Proceedings Paper

Performance of EUV molecular resists based on fullerene derivatives
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

This paper summarizes the development of EUV molecular resists based on fullerene derivatives: the lithographic evaluation results of EUV resists using a small-field exposure tool (SFET). Moreover this is the first report on the application of fullerene-based molecular resists to half-pitch (hp) 3x-nm test device fabrication using a full-field step-and-scan exposure tool (EUV1).

Paper Details

Date Published: 16 April 2011
PDF: 7 pages
Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 797209 (16 April 2011); doi: 10.1117/12.879302
Show Author Affiliations
Hiroaki Oizumi, Semiconductor Leading Edge Technologies, Inc. (Japan)
Kentaro Matsunaga, Semiconductor Leading Edge Technologies, Inc. (Japan)
Koji Kaneyama, Semiconductor Leading Edge Technologies, Inc. (Japan)
Julius Joseph Santillan, Semiconductor Leading Edge Technologies, Inc. (Japan)
Gousuke Shiraishi, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshiro Itani, Semiconductor Leading Edge Technologies, Inc. (Japan)


Published in SPIE Proceedings Vol. 7972:
Advances in Resist Materials and Processing Technology XXVIII
Robert D. Allen; Mark H. Somervell, Editor(s)

© SPIE. Terms of Use
Back to Top