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Proceedings Paper

Performance of tri-layer process required for 22 nm and beyond
Author(s): Yayi Wei; Martin Glodde; Hakeem Yusuff; Margaret Lawson; Sang Yil Chang; Kwang Sub Yoon; Chung-Hsi Wu; Mark Kelling
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Paper Abstract

Silicon-containing antireflection coating (SiARC) and spin-on carbon (SOC) under-layers have been widely implemented for advanced semiconductor manufacturing since the 45 nm node. The combination of SiARC and SOC promises a superior solution for reflection control and a high etch selectivity. With the industry marching towards 22 nm and beyond, the tri-layer materials and processes are being finely tuned to meet the requirements. We report comprehensive evaluation results of the SiARC (with high silicon content) and carbon under-layer from manufacturing perspective. It focuses on the performances that are required to extend the tri-layer applications from the original 45 nm nodes to 22 nm and beyond, such as thickness selection, etch selectivity, resist compatibility, rework capability, and under-layer pattern wiggling issues.

Paper Details

Date Published: 16 April 2011
PDF: 12 pages
Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 79722L (16 April 2011); doi: 10.1117/12.879301
Show Author Affiliations
Yayi Wei, GLOBALFOUNDRIES Inc. (United States)
Martin Glodde, IBM Thomas J. Watson Research Ctr. (United States)
Hakeem Yusuff, IBM Microelectronics (United States)
Margaret Lawson, IBM Microelectronics (United States)
Sang Yil Chang, SAMSUNG Electronics Co., Ltd. (United States)
Kwang Sub Yoon, SAMSUNG Electronics Co., Ltd. (United States)
Chung-Hsi Wu, IBM Microelectronics (United States)
Mark Kelling, GLOBALFOUNDRIES Inc. (United States)


Published in SPIE Proceedings Vol. 7972:
Advances in Resist Materials and Processing Technology XXVIII
Robert D. Allen; Mark H. Somervell, Editor(s)

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