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Proceedings Paper

Study on a few α-disulfone compounds as photoacid generators
Author(s): Dongfang Guo; Juan Liu; Liyuan Wang
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Paper Abstract

In this work a few α-disulfone compounds with different substituents were prepared by a simple nitric acid oxidation of corresponding disulfonylhydrazines which were prepared by reaction of sulfonyl chloride and aqueous hydrazine. Most of the compounds are soluble in common organic solvents for photoresists. The thermal decomposition temperatures of the compounds were detected to be above 190 °C. The UV absorption spectra of the α-disulfone compounds were measured with the absorption peaks (λmax) around 250 nm. Quantum yields of the disulfone compounds in solution were determined to be in the range of 0.4-0.6 with low pressure Hg lamp as exposure light source.

Paper Details

Date Published: 15 April 2011
PDF: 8 pages
Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 79722D (15 April 2011); doi: 10.1117/12.879296
Show Author Affiliations
Dongfang Guo, Beijing Normal Univ. (China)
Juan Liu, Beijing Normal Univ. (China)
Liyuan Wang, Beijing Normal Univ. (China)

Published in SPIE Proceedings Vol. 7972:
Advances in Resist Materials and Processing Technology XXVIII
Robert D. Allen; Mark H. Somervell, Editor(s)

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