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Proceedings Paper

InGaAs/AlInAs quantum cascade laser sources based on intra-cavity second harmonic generation emitting in 2.6-3.6 micron range
Author(s): M. A. Belkin; M. Jang; R. W. Adams; J. X. Chen; W. O. Charles; C. Gmachl; L. W. Cheng; F.-S. Choa; X. Wang; M. Troccoli; A. Vizbaras; M. Anders; C. Grasse; M.-C. Amann
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Paper Abstract

We discuss the design and performance of quantum cascade laser sources based on intra-cavity second harmonic generation operating in at wavelengths shorter than 3.7μm. A passive heterostructure tailored for giant optical nonlinearity is integrated on top of an active region and patterned for quasi-phasematching. We demonstrate operation of λ≈3.6μm, λ≈3.0μm, and λ≈2.6m devices based on lattice-matched and strain-compensated InGaAs/AlInAs/InP materials. Threshold current densities of typical devices with nonlinear sections are only 10-20% higher than that of the reference lasers without the nonlinear section. Our best devices have threshold current density of 2.2kA/cm2 and provide approximately 35μW of second-harmonic output at 2.95μm at room temperature. The second-harmonic conversion efficiency is approximately 100μW/W2. Up to two orders of magnitude higher conversion efficiencies are expected in fully-optimized devices.

Paper Details

Date Published: 17 February 2011
PDF: 7 pages
Proc. SPIE 7953, Novel In-Plane Semiconductor Lasers X, 795315 (17 February 2011); doi: 10.1117/12.879232
Show Author Affiliations
M. A. Belkin, The Univ. of Texas at Austin (United States)
M. Jang, The Univ. of Texas at Austin (United States)
R. W. Adams, The Univ. of Texas at Austin (United States)
J. X. Chen, Princeton Univ. (United States)
W. O. Charles, Princeton Univ. (United States)
C. Gmachl, Princeton Univ. (United States)
L. W. Cheng, Univ. of Maryland, Baltimore County (United States)
F.-S. Choa, Univ. of Maryland, Baltimore County (United States)
X. Wang, AdTech Optics, Inc. (United States)
M. Troccoli, AdTech Optics, Inc. (United States)
A. Vizbaras, Walter Schottky Institute (Germany)
M. Anders, Walter Schottky Institute (Germany)
C. Grasse, Walter Schottky Institute (Germany)
M.-C. Amann, Walter Schottky Institute (Germany)


Published in SPIE Proceedings Vol. 7953:
Novel In-Plane Semiconductor Lasers X
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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