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Proceedings Paper

A compact optically pumped semiconductor laser emitting at 593 nm
Author(s): Ruediger von Elm; Soenke Offen; Wolf Seelert; Vasiliy Ostroumov; Dirk Mohrenstecher; Joachim Brunn
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Paper Abstract

We achieved 100mW cw of 593nm by intracavity sum frequency generation in a branched cavity, dual laser set up. Two gain media were used: Nd:YVO4 for generating 1342nm, diode-pumped by 3.7W at 808nm, and an optically pumped semiconductor chip (OPS), designed for 1064nm emission, diode-pumped by 1.7W at 808nm. Due to the short upperstate lifetime of the OPS, the generated 593nm output power was stable.A

Paper Details

Date Published: 16 February 2011
PDF: 9 pages
Proc. SPIE 7912, Solid State Lasers XX: Technology and Devices, 79120G (16 February 2011); doi: 10.1117/12.879229
Show Author Affiliations
Ruediger von Elm, Coherent Lubeck GmbH (United States)
Soenke Offen, Laserlabor (Germany)
Wolf Seelert, Coherent Lubeck GmbH (Germany)
Vasiliy Ostroumov, Coherent Lubeck GmbH (Germany)
Dirk Mohrenstecher, Coherent Lubeck GmbH (Germany)
Joachim Brunn, Laserlabor (Germany)


Published in SPIE Proceedings Vol. 7912:
Solid State Lasers XX: Technology and Devices
W. Andrew Clarkson; Norman Hodgson; Ramesh Shori, Editor(s)

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