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A compact optically pumped semiconductor laser emitting at 593 nm| Format | Member Price | Non-Member Price |
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Paper Abstract
We achieved 100mW cw of 593nm by intracavity sum frequency generation in a branched cavity, dual laser set up. Two
gain media were used: Nd:YVO4 for generating 1342nm, diode-pumped by 3.7W at 808nm, and an optically pumped
semiconductor chip (OPS), designed for 1064nm emission, diode-pumped by 1.7W at 808nm. Due to the short
upperstate lifetime of the OPS, the generated 593nm output power was stable.A
Paper Details
Date Published: 15 February 2011
PDF: 9 pages
Proc. SPIE 7912, Solid State Lasers XX: Technology and Devices, 79120G (15 February 2011); doi: 10.1117/12.879229
Published in SPIE Proceedings Vol. 7912:
Solid State Lasers XX: Technology and Devices
W. Andrew Clarkson; Norman Hodgson; Ramesh Shori, Editor(s)
PDF: 9 pages
Proc. SPIE 7912, Solid State Lasers XX: Technology and Devices, 79120G (15 February 2011); doi: 10.1117/12.879229
Show Author Affiliations
Ruediger von Elm, Coherent Lubeck GmbH (United States)
Soenke Offen, Laserlabor (Germany)
Wolf Seelert, Coherent Lubeck GmbH (Germany)
Soenke Offen, Laserlabor (Germany)
Wolf Seelert, Coherent Lubeck GmbH (Germany)
Vasiliy Ostroumov, Coherent Lubeck GmbH (Germany)
Dirk Mohrenstecher, Coherent Lubeck GmbH (Germany)
Joachim Brunn, Laserlabor (Germany)
Dirk Mohrenstecher, Coherent Lubeck GmbH (Germany)
Joachim Brunn, Laserlabor (Germany)
Published in SPIE Proceedings Vol. 7912:
Solid State Lasers XX: Technology and Devices
W. Andrew Clarkson; Norman Hodgson; Ramesh Shori, Editor(s)
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