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Proceedings Paper

Towards defect free EUVL reticles: carbon and particle removal by single dry cleaning process and pattern repair by HIM
Author(s): N. B. Koster; F. T. Molkenboer; E. van Veldhoven; S. Oostrom
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Paper Abstract

We report on our findings on EUVL reticle contamination removal, inspection and repair. We show that carbon contamination can be removed without damage to the reticle by our plasma process. Also organic particles, simulated by PSL spheres, can be removed from both the surface of the absorber as well as from the bottom of the trenches. The particles shrink in size during the plasma treatment until they are vanished. The determination of the necessary cleaning time for PSL spheres was conducted on Ru coated samples and the final experiment was performed on our dummy reticle. Finally we show that the Helium Ion Microscope in combination with a Gas Injection System is capable of depositing additional lines and squares on the reticle with sufficient resolution for pattern repair.

Paper Details

Date Published: 7 April 2011
PDF: 9 pages
Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 79690X (7 April 2011); doi: 10.1117/12.879216
Show Author Affiliations
N. B. Koster, TNO (Netherlands)
F. T. Molkenboer, TNO (Netherlands)
E. van Veldhoven, TNO (Netherlands)
S. Oostrom, TNO (Netherlands)


Published in SPIE Proceedings Vol. 7969:
Extreme Ultraviolet (EUV) Lithography II
Bruno M. La Fontaine; Patrick P. Naulleau, Editor(s)

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