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Proceedings Paper

Source and mask optimization applications in manufacturing
Author(s): ChinTeong Lim; Vlad Temchenko; Ulrich Klostermann; Vitaliy Domnenko; Jens Schneider; Daniel Sarlette; Ingo Meusel; Dieter Kaiser; Ralf Ploss
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Paper Abstract

Among available lithography resolution enhancement techniques the Selective Inverse Lithography (SILT) approach recently introduced by authors [1] has been shown to provide the largest process window on lower-NA exposure tools for 65nm contact layer patterning. In present paper we attempt to harness the benefits of source mask optimization (SMO) approach as part of our hybrid RET. The application of source mask optimization techniques further extends the life-span of lower-NA 193nm exposure-tools in high volume manufacturing. By including SMO step in OPC flow, we show that model-based SRAF solution can be improved to approach SILT process variation (PV) band performance. Additionally to OPC, the complexity of embedded flash designs requires a high degree of exposure tool matching and a lithography process optimized for topographically different logic and flash areas. We present a method how SMO can be applied to scanner matching and topography-related optimization.

Paper Details

Date Published: 22 March 2011
PDF: 13 pages
Proc. SPIE 7973, Optical Microlithography XXIV, 797322 (22 March 2011); doi: 10.1117/12.879203
Show Author Affiliations
ChinTeong Lim, Infineon Technologies Dresden GmbH (Germany)
Vlad Temchenko, Infineon Technologies Dresden GmbH (Germany)
Ulrich Klostermann, Synopsys, Inc. (Germany)
Vitaliy Domnenko, Synopsys, Inc. (Germany)
Jens Schneider, Infineon Technologies Dresden GmbH (Germany)
Daniel Sarlette, Infineon Technologies Dresden GmbH (Germany)
Ingo Meusel, Infineon Technologies Dresden GmbH (Germany)
Dieter Kaiser, Infineon Technologies Dresden GmbH (Germany)
Ralf Ploss, Toppan Photomasks Germany GmbH (Germany)

Published in SPIE Proceedings Vol. 7973:
Optical Microlithography XXIV
Mircea V. Dusa, Editor(s)

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