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Proceedings Paper

Study of model-assisted rule base SRAF for random contact
Author(s): James Moon; Byoung-Sub Nam; Cheol-Kyun Kim; Hyong-Sun Yun; Ji-Young Lee; Donggyu Yim; Sung-Ki Park
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Paper Abstract

In this paper, we will evaluate model assisted rule base SRAF. Model assisted rule base SRAF combines the advantage of both model based SRAF and rule base SRAF to ensure high process margin without the mask making difficulty with stable wafer output. Model will assist in generating a common rule for rule based SRAF. Method to extract the rule from the models will first be discussed. Model assisted rule based SRAF will be applied to 3Xnm DRAM contact. Evaluation and analysis of the simulated and actual wafer result will be discussed. Our wafer result showed that by applying Model assisted rule based SRAF showed nearly equal performance to models based SRAF with clearly better stability and mask fabrication feasibility.

Paper Details

Date Published: 23 March 2011
PDF: 9 pages
Proc. SPIE 7973, Optical Microlithography XXIV, 79732H (23 March 2011); doi: 10.1117/12.879201
Show Author Affiliations
James Moon, Hynix Semiconductor Inc. (Korea, Republic of)
Byoung-Sub Nam, Hynix Semiconductor Inc. (Korea, Republic of)
Cheol-Kyun Kim, Hynix Semiconductor Inc. (Korea, Republic of)
Hyong-Sun Yun, Hynix Semiconductor Inc. (Korea, Republic of)
Ji-Young Lee, Mentor Graphics (Korea, Republic of)
Donggyu Yim, Hynix Semiconductor Inc. (Korea, Republic of)
Sung-Ki Park, Hynix Semiconductor Inc. (Korea, Republic of)


Published in SPIE Proceedings Vol. 7973:
Optical Microlithography XXIV
Mircea V. Dusa, Editor(s)

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