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Proceedings Paper

Development of molecular resists based on Phenyl[4]calixarene for EBL
Author(s): Masaaki Takasuka; Yu Okada; Hiromi Hayashi; Masatoshi Echigo
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Paper Abstract

In this paper, we report current performance of the negative-tone molecular resists based on calix[4]resorcinarene (CRA) by Electron Beam Lithography (EBL). We have developed hydroxyphenyl calix[4]resorcinarenes (H-CRAs) designed hydroxy-groups outer to adhere patterns to wafers. Hydroxy groups help patterns adhere to wafers, to restrain collapse of patterns. Moreover, we additionally controlled hydrophobicity of H-CRA by the alkyl-groups (R), which make the sensitivity higher. The negative-tone resist based on these H-CRAs shows well-defined 25-50nm half-pitch patterns, and the increase in hydrophobicity of H-CRA by the alkyl-groups (R) made the high sensitivity. Furthermore, the optimization of these resist formulation improved sensitivity and LER.

Paper Details

Date Published: 16 April 2011
PDF: 8 pages
Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 797223 (16 April 2011); doi: 10.1117/12.879122
Show Author Affiliations
Masaaki Takasuka, Mitsubishi Gas Chemical Co., Inc. (Japan)
Yu Okada, Mitsubishi Gas Chemical Co., Inc. (Japan)
Hiromi Hayashi, Mitsubishi Gas Chemical Co., Inc. (Japan)
Masatoshi Echigo, Mitsubishi Gas Chemical Co., Inc. (Japan)


Published in SPIE Proceedings Vol. 7972:
Advances in Resist Materials and Processing Technology XXVIII
Robert D. Allen; Mark H. Somervell, Editor(s)

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