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Proceedings Paper

Accuracy and performance of 3D mask models in optical projection lithography
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Paper Abstract

Different mask models have been compared: rigorous electromagnetic field (EMF) modeling, rigorous EMF modeling with decomposition techniques and the thin mask approach (Kirchhoff approach) to simulate optical diffraction from different mask patterns in projection systems for lithography. In addition, each rigorous model was tested for two different formulations for partially coherent imaging: The Hopkins assumption and rigorous simulation of mask diffraction orders for multiple illumination angles. The aim of this work is to closely approximate results of the rigorous EMF method by the thin mask model enhanced with pupil filtering techniques. The validity of this approach for different feature sizes, shapes and illumination conditions is investigated.

Paper Details

Date Published: 22 March 2011
PDF: 11 pages
Proc. SPIE 7973, Optical Microlithography XXIV, 79730O (22 March 2011); doi: 10.1117/12.879053
Show Author Affiliations
Viviana Agudelo, Graduate School of Advanced Optical Technologies (Germany)
Friedrich-Alexander-Univ. Erlangen-Nürnberg (Germany)
Fraunhofer-Institut für Integrierte System und Bauelementetechnologie (Germany)
Peter Evanschitzky, Fraunhofer-Institut für Integrierte System und Bauelementetechnologie (Germany)
Andreas Erdmann, Fraunhofer-Institut für Integrierte System und Bauelementetechnologie (Germany)
Tim Fühner, Fraunhofer-Institut für Integrierte System und Bauelementetechnologie (Germany)
Feng Shao, Erlangen Graduate School of Advanced Optical Technologies (Germany)
Fraunhofer-Institut für Integrierte System und Bauelementetechnologie (Germany)
Steffen Limmer, Friedrich-Alexander-Univ. Erlangen-Nürnberg (Germany)
Dietmar Fey, Friedrich-Alexander-Univ. Erlangen-Nürnberg (Germany)


Published in SPIE Proceedings Vol. 7973:
Optical Microlithography XXIV
Mircea V. Dusa, Editor(s)

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