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Proceedings Paper

Diffusion of amines from resist to BARC layer
Author(s): Masamitsu Shirai; Tatsuya Hatsuse; Haruyuki Okamura; Shigeo Kimura; Yasuyuki Nakajima
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Paper Abstract

In chemically amplified (CA) resist systems, photo-chemically generated acid can diffuse in resist matrix and the acid induces the de-protection reaction of resists. To control the rate of the de-protection reaction, small amounts of amines must be added as a quencher. The concentration of amines in resist matrix should be constant during the post-exposure-bake (PEB) treatment. In the practical resist processes, organic bottom anti-reflective coating (BARC) is essentially important to provide reflectivity control for resist patterning. In this study, we have studied the diffusion characteristics of amines from resist layer to BARC layer by bake treatment. The amine concentration in resist layer was estimated using the rate of de-protection reaction of conventional CA resist. It was found that the diffusion rate of amines from resist layer to BARC layer was negligibly low.

Paper Details

Date Published: 16 April 2011
PDF: 6 pages
Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 79721O (16 April 2011); doi: 10.1117/12.879039
Show Author Affiliations
Masamitsu Shirai, Osaka Prefecture Univ. (Japan)
Tatsuya Hatsuse, Osaka Prefecture Univ. (Japan)
Haruyuki Okamura, Osaka Prefecture Univ. (Japan)
Shigeo Kimura, Nissan Chemical Industries, Ltd. (Japan)
Yasuyuki Nakajima, Nissan Chemical Industries, Ltd. (Japan)


Published in SPIE Proceedings Vol. 7972:
Advances in Resist Materials and Processing Technology XXVIII
Robert D. Allen; Mark H. Somervell, Editor(s)

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