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GaAs/GaInP double heterostructure characterization for laser cooling of semiconductors
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Paper Abstract

External quantum efficiency of semiconductor photonic devices is directly measured by wavelength-dependent laser-induced temperature change (scanning laser calorimetry) with very high accuracy. Maximum efficiency is attained at an optimum photo-excitation level that can be determined with an independent measurement of power-dependent photoluminescence. Differential power-dependent photoluminescence measurement is used to quickly screen the sample quality before processing.

Paper Details

Date Published: 9 February 2011
PDF: 14 pages
Proc. SPIE 7951, Laser Refrigeration of Solids IV, 79510D (9 February 2011); doi: 10.1117/12.878979
Show Author Affiliations
Chengao Wang, The Univ. of New Mexico (United States)
Chia-Yeh Li, The Univ. of New Mexico (United States)
Michael P. Hasselbeck, The Univ. of New Mexico (United States)
Thomas Rotter, The Univ. of New Mexico (United States)
Kevin Malloy, The Univ. of New Mexico (United States)
Mansoor Sheik-Bahae, The Univ. of New Mexico (United States)
Jerry Olson, National Renewable Energy Lab. (United States)

Published in SPIE Proceedings Vol. 7951:
Laser Refrigeration of Solids IV
Richard Epstein; Mansoor Sheik-Bahae, Editor(s)

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