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Proceedings Paper

Verification and extension of the MBL technique for photo resist pattern shape measurement
Author(s): Miki Isawa; Maki Tanaka; Hideyuki Kazumi; Chie Shishido; Akira Hamamatsu; Norio Hasegawa; Peter De Bisschop; David Laidler; Philippe Leray; Shaunee Cheng
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Paper Abstract

In order to achieve pattern shape measurement with CD-SEM, the Model Based Library (MBL) technique is in the process of development. In this study, several libraries which consisted by double trapezoid model placed in optimum layout, were used to measure the various layout patterns. In order to verify the accuracy of the MBL photoresist pattern shape measurement, CDAFM measurements were carried out as a reference metrology. Both results were compared to each other, and we confirmed that there is a linear correlation between them. After that, to expand the application field of the MBL technique, it was applied to end-of-line (EOL) shape measurement to show the capability. Finally, we confirmed the possibility that the MBL could be applied to more local area shape measurement like hot-spot analysis.

Paper Details

Date Published: 20 April 2011
PDF: 11 pages
Proc. SPIE 7971, Metrology, Inspection, and Process Control for Microlithography XXV, 79710Z (20 April 2011); doi: 10.1117/12.878960
Show Author Affiliations
Miki Isawa, Hitachi High-Technologies Corp. (Japan)
Maki Tanaka, Hitachi, Ltd. (Japan)
Hideyuki Kazumi, Hitachi High-Technologies Corp. (Japan)
Chie Shishido, Hitachi, Ltd. (Japan)
Akira Hamamatsu, Hitachi, Ltd. (Japan)
Norio Hasegawa, Hitachi High-Technologies Corp. (Japan)
Peter De Bisschop, IMEC (Belgium)
David Laidler, IMEC (Belgium)
Philippe Leray, IMEC (Belgium)
Shaunee Cheng, IMEC (Belgium)

Published in SPIE Proceedings Vol. 7971:
Metrology, Inspection, and Process Control for Microlithography XXV
Christopher J. Raymond, Editor(s)

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