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Proceedings Paper

High-precision edge-roughness measurement of transistor gates using three-dimensional electron microscopy combined with marker-assisted image alignment
Author(s): Shiano Ono; Miyuki Yamane; Mitsuo Ogasawara; Akira Katakami; Jiro Yugami; Masanari Koguchi; Hiroyuki Shinada; Hiroshi Kakibayashi; Kazuto Ikeda; Yuzuru Ohji
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Paper Abstract

We have improved both the spatial resolution and precision of three-dimensional (3D) electron microscopy, which is based on conventional scanning transmission electron microscopy (STEM), by using a micro-pillar specimen together with a 3D analysis holder, and by introducing marker-assisted image alignment prior to 3D reconstruction. Our 3D STEM measurement of aggressively scaled metal-oxide-semiconductor (MOS) gate structures not only successfully showed the z-axis positional dependence of gate-edge profiles and edge-roughness profiles such as line edge roughness (LER) and line width roughness (LWR), but also revealed uniformity of each layer of which the gate structure was composed. Such observations are very important in controlling future device characteristics, but are difficult to obtain using other measurement techniques.

Paper Details

Date Published: 20 April 2011
PDF: 7 pages
Proc. SPIE 7971, Metrology, Inspection, and Process Control for Microlithography XXV, 79710M (20 April 2011); doi: 10.1117/12.878949
Show Author Affiliations
Shiano Ono, Semiconductor Leading Edge Technologies, Inc. (Japan)
Miyuki Yamane, Hitachi, Ltd. (Japan)
Mitsuo Ogasawara, Hitachi High-Technologies Corp. (Japan)
Akira Katakami, Semiconductor Leading Edge Technologies, Inc. (Japan)
Jiro Yugami, Semiconductor Leading Edge Technologies, Inc. (Japan)
Masanari Koguchi, Hitachi, Ltd. (Japan)
Hiroyuki Shinada, Hitachi, Ltd. (Japan)
Hiroshi Kakibayashi, Hitachi High-Technologies Corp. (Japan)
Kazuto Ikeda, Semiconductor Leading Edge Technologies, Inc. (Japan)
Yuzuru Ohji, Semiconductor Leading Edge Technologies, Inc. (Japan)


Published in SPIE Proceedings Vol. 7971:
Metrology, Inspection, and Process Control for Microlithography XXV
Christopher J. Raymond, Editor(s)

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