Share Email Print

Proceedings Paper

The enhanced photoresist shrink process technique toward 22nm node
Author(s): Kenichi Oyama; Shohei Yamauchi; Kazuo Yabe; Arisa Hara; Sakurako Natori; Hidetami Yaegashi
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

In fine patterning process technology, the pattern shrink process technique is indispensable in addition to pitch shrink. Tokyo Electron has previously demonstrated the application of this technique to trench-pattern shrink for dual trench LELE, simple hole shrink for the circular pattern, and rectangle pattern shrink for cut mask of SADP+line cut. In this paper, we introduce technology that can shrink photoresist for application to a short-trench and contact hole pattern. Using chemical shrink as a reference for comparison, we report on the effectiveness of TEL's original ALD SiO2 shrink process. In addition, we propose various contact pitch shrink schemes for applying double patterning technique.

Paper Details

Date Published: 15 April 2011
PDF: 6 pages
Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 79722Q (15 April 2011); doi: 10.1117/12.878947
Show Author Affiliations
Kenichi Oyama, Tokyo Electron Ltd. (Japan)
Shohei Yamauchi, Tokyo Electron Ltd. (Japan)
Kazuo Yabe, Tokyo Electron Ltd. (Japan)
Arisa Hara, Tokyo Electron Ltd. (Japan)
Sakurako Natori, Tokyo Electron Ltd. (Japan)
Hidetami Yaegashi, Tokyo Electron Ltd. (Japan)

Published in SPIE Proceedings Vol. 7972:
Advances in Resist Materials and Processing Technology XXVIII
Robert D. Allen; Mark H. Somervell, Editor(s)

© SPIE. Terms of Use
Back to Top