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Proceedings Paper

Calculated reactivity analysis of photoacid generators for EUV resist
Author(s): M. Endo; S. Tagawa
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Paper Abstract

We evaluated reactivity of photoacid generators for EUV resist using the quantum chemical calculation. As the secondary electron from the polymer in resist causes the reaction of photoacid generator, the reactivity of photoacid generator is determined as its electron affinity. We performed optimization of the molecular structure with and without electron addition to the photoacid generator and calculated each molecular energy. We defined the absolute value of the difference of molecular energy as the stabilization energy, which can be the electron affinity of photoacid generator. The typical substituents to photoacid generators of triphenylsulfonium trifluoromethanesulfonate and tricyclohexylsulfonium trifluoromethanesulfonate were investigated. We found that incorporation of electron withdrawing group enhances the reactivity of photoacid generators.

Paper Details

Date Published: 16 April 2011
PDF: 7 pages
Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 79721J (16 April 2011); doi: 10.1117/12.878942
Show Author Affiliations
M. Endo, Osaka Univ. (Japan)
Japan Science and Technology Agency, CREST (Japan)
S. Tagawa, Osaka Univ. (Japan)
Japan Science and Technology Agency, CREST (Japan)


Published in SPIE Proceedings Vol. 7972:
Advances in Resist Materials and Processing Technology XXVIII
Robert D. Allen; Mark H. Somervell, Editor(s)

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