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Proceedings Paper

ZnO nanorods for light-emitting diode applications
Author(s): Xinyi Chen; Alan M. C. Ng; Ka Kan Wong; Aleksandra B. Djurišić; Fang Fang; Wai Kin Chan; Patrick Wai Keung Fong; Hsian Fei Lui; Charles Surya
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Paper Abstract

We investigated the influence of the growth method, growth conditions, and post-growth treatments on the ZnO nanorod properties and the performance of heterojunction light emitting diodes (LEDs) based on ZnO nanorods. Due to small lattice mismatch between GaN and ZnO, we will mainly consider p-GaN/n-ZnO nanorod heterojunctions. The influence of p-GaN substrate and the influence of growth method and growth conditions used for ZnO nanorods on the LED performance will be discussed.

Paper Details

Date Published: 15 March 2011
PDF: 7 pages
Proc. SPIE 7940, Oxide-based Materials and Devices II, 79400B (15 March 2011); doi: 10.1117/12.878940
Show Author Affiliations
Xinyi Chen, The Univ. of Hong Kong (Hong Kong, China)
Alan M. C. Ng, The Univ. of Hong Kong (Hong Kong, China)
Ka Kan Wong, The Univ. of Hong Kong (Hong Kong, China)
Aleksandra B. Djurišić, The Univ. of Hong Kong (Hong Kong, China)
Fang Fang, The Univ. of Hong Kong (Hong Kong, China)
Wai Kin Chan, The Univ. of Hong Kong (Hong Kong, China)
Patrick Wai Keung Fong, Hong Kong Polytechnic Univ. (Hong Kong, China)
Hsian Fei Lui, Hong Kong Polytechnic Univ. (Hong Kong, China)
Charles Surya, Hong Kong Polytechnic Univ. (Hong Kong, China)


Published in SPIE Proceedings Vol. 7940:
Oxide-based Materials and Devices II
Ferechteh Hosseini Teherani; David C. Look; David J. Rogers, Editor(s)

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