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Proceedings Paper

Damage/organic free ozonated DI water cleaning on EUVL Ru capping layer
Author(s): Seung-ho Lee; Bong-kyun Kang; Hyuk-min Kim; Min-soo Kim; Han-ku Cho; Chan-uk Jeon; Hyung-ho Ko; Han-shin Lee; Jin-ho Ahn; Jin-Goo Park
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Paper Abstract

The adaption of EUVL requires the development of new cleaning method for the removal of new contaminant without surface damage. One of the harsh contaminants is the carbon contamination generated during EUV exposure. This highly dense organic contaminant is hardly removed by conventional SPM solution on Ru capped Mo/Si multilayer. The hopeful candidate for this removal is ozonated water (DIO3), which is not only well-known strong oxidizer but also environmentally friendly solution. However, this solution might cause some damage to the Ru capping layer mostly depending on its concentration. For these reasons, DIO3 cleaning solutions, which are generated with various additive gases, were characterized to understand the correlation between DIO3 concentration and damages on 2.5 nm thick ruthenium (Ru) surface. An optimized DIO3 generation method and cleaning condition were developed with reduced surface damage. These phenomena were explained by electrochemical reaction.

Paper Details

Date Published: 25 September 2010
PDF: 7 pages
Proc. SPIE 7823, Photomask Technology 2010, 78232Z (25 September 2010); doi: 10.1117/12.878895
Show Author Affiliations
Seung-ho Lee, Hanyang Univ. (Korea, Republic of)
Bong-kyun Kang, Hanyang Univ. (Korea, Republic of)
Hyuk-min Kim, Hanyang Univ. (Korea, Republic of)
Min-soo Kim, Hanyang Univ. (Korea, Republic of)
Han-ku Cho, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Chan-uk Jeon, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Hyung-ho Ko, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Han-shin Lee, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Jin-ho Ahn, Hanyang Univ. (Korea, Republic of)
Jin-Goo Park, Hanyang Univ. (Korea, Republic of)


Published in SPIE Proceedings Vol. 7823:
Photomask Technology 2010
M. Warren Montgomery; Wilhelm Maurer, Editor(s)

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