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Proceedings Paper

Layer-by-layer epitaxial growth of polar MgO (111) films with atomically flat surfaces
Author(s): Kosuke Matsuzaki; Hideo Hosono; Tomofumi Susaki
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Paper Abstract

We have succeeded in layer-by-layer epitaxial growth of MgO (111) films using single-crystalline NiO buffer films by pulsed laser deposition along the [111] polar growth direction despite a strong electrostatic instability. Layer-by-layer growth was clearly observed up to ~ 10 MgO layers with monolayer step and terrace structure. Further thicker films of 10 - 500 MgO layer present the root mean square surface roughness as small as ~ 0.2 nm with high crystalline quality comparable to the single-crystal NiO buffer layers although the step and terrace structure disappeared. Transmission electron microscopy study indicates formation of an atomic smooth MgO/NiO interface although low-quality domains with dislocations and strains and high-quality domains coexisted in the regin away from the interface. Thus the electrostatic instability of thicker MgO films induced the switching from layer-by-layer to three dimensional growth mode by introducing the double domain structures.

Paper Details

Date Published: 15 March 2011
PDF: 8 pages
Proc. SPIE 7940, Oxide-based Materials and Devices II, 794012 (15 March 2011); doi: 10.1117/12.878866
Show Author Affiliations
Kosuke Matsuzaki, Tokyo Institute of Technology (Japan)
Hideo Hosono, Tokyo Institute of Technology (Japan)
Tomofumi Susaki, Tokyo Institute of Technology (Japan)
Japan Science and Technology Agency (Japan)


Published in SPIE Proceedings Vol. 7940:
Oxide-based Materials and Devices II
Ferechteh Hosseini Teherani; David C. Look; David J. Rogers, Editor(s)

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