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Proceedings Paper

Etch durable spin-on hard mask
Author(s): Makoto Muramatsu; Mitsuaki Iwashita; Takashi Kondo; Hisashi Hirose; Seiji Fujimoto
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Paper Abstract

As decreasing the device feature size, the film stack structure used in resist process is also changing. Especially multilayer stack film structure is getting popular for pattern formation on critical layers. Our approach is to form a spin-on hard mask film with high etch resistance by introduction of a new baking function. The results show that a spin-on hard mask film processed by an underlayer coating system of Tokyo Electron Ltd. (TEL) has drastically improved etch resistance compared to a conventional system. We will report the availability of new underlayer system using several kinds of underlayer materials.

Paper Details

Date Published: 16 April 2011
PDF: 6 pages
Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 797226 (16 April 2011); doi: 10.1117/12.878863
Show Author Affiliations
Makoto Muramatsu, Tokyo Electron Kyusyu Ltd. (Japan)
Mitsuaki Iwashita, Tokyo Electron Kyusyu Ltd. (Japan)
Takashi Kondo, Tokyo Electron AT Ltd. (Japan)
Hisashi Hirose, Tokyo Electron AT Ltd. (Japan)
Seiji Fujimoto, Tokyo Electron Ltd. (Japan)


Published in SPIE Proceedings Vol. 7972:
Advances in Resist Materials and Processing Technology XXVIII
Robert D. Allen; Mark H. Somervell, Editor(s)

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