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Proceedings Paper

Study of post-develop defect on typical EUV resist
Author(s): Masahiko Harumoto; Sadayasu Suyama; Tadashi Miyagi; Akihiko Morita; Masaya Asai; Koji Kaneyama; Toshiro Itani
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Paper Abstract

This study reports on post-develop defect for EUV resist process. Presently, research and development of EUV resists are continuously being carried out in terms of resolution, sensitivity, LWR. However, in the preparation of EUV lithography for mass-production, research on the reduction of pattern defects, especially post-develop defect is also necessary. As observed during the early stages of resist development for the various lithographic technologies, a large number of pattern defects are commonly coming from the resist dissolution process. As previously reported, utilizing an EUV exposure tool, we have classified several EUV specific defects on exposed and un-exposed area. And also we have reported approaches of defect reduction. In this work, using some types developer solution (TBAH, TBAH+, etc) comparing with current developer solution (TMAH), EUV specific defects were evaluated. Furthermore, we investigated the defect appearing-mechanism and approached defect reduction by track process. Finally, based on these results, the direction of defect reduction approaches applicable for EUV resist processing was discussed.

Paper Details

Date Published: 8 April 2011
PDF: 11 pages
Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 79692G (8 April 2011); doi: 10.1117/12.878859
Show Author Affiliations
Masahiko Harumoto, SOKUDO Co., Ltd. (Japan)
Sadayasu Suyama, SOKUDO Co., Ltd. (Japan)
Tadashi Miyagi, SOKUDO Co., Ltd. (Japan)
Akihiko Morita, SOKUDO Co., Ltd. (Japan)
Masaya Asai, SOKUDO Co., Ltd. (Japan)
Koji Kaneyama, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshiro Itani, Semiconductor Leading Edge Technologies, Inc. (Japan)


Published in SPIE Proceedings Vol. 7969:
Extreme Ultraviolet (EUV) Lithography II
Bruno M. La Fontaine; Patrick P. Naulleau, Editor(s)

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