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Proceedings Paper

Cathodoluminescence spectroscopy on selectively grown GaN nanowires
Author(s): T. Schumann; T. Gotschke; F. Limbach; T. Stoica; R. Calarco
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Paper Abstract

GaN nanowires (NWs) were grown selectively on Si(111) substrate without catalyst by plasma-assisted molecular-beam epitaxy under N-rich conditions. The selective growth was obtained using regular arrays of holes patterned in a silicon oxide layer on top of a thin AlN buffer. The optical properties of the selectively grown GaN NWs have been studied using cathodoluminescence (CL) spectroscopy. Both, CL spectra measured on NW ensembles and spatially resolved monochromatic images were investigated. From a comparison of morphology and CL studies it emerges that NW coalescence is responsible for the appearance of the defect related emission.

Paper Details

Date Published: 3 March 2011
PDF: 9 pages
Proc. SPIE 7939, Gallium Nitride Materials and Devices VI, 793903 (3 March 2011); doi: 10.1117/12.878836
Show Author Affiliations
T. Schumann, Forschungszentrum Jülich GmbH (Germany)
Paul-Drude-Institut für Festkörperelektronik (Germany)
T. Gotschke, Forschungszentrum Jülich GmbH (Germany)
Paul-Drude-Institut für Festkörperelektronik (Germany)
F. Limbach, Forschungszentrum Jülich GmbH (Germany)
Paul-Drude-Institut für Festkörperelektronik (Germany)
T. Stoica, Forschungszentrum Jülich GmbH (Germany)
R. Calarco, Forschungszentrum Jülich GmbH (Germany)
Paul-Drude-Institut für Festkörperelektronik (Germany)


Published in SPIE Proceedings Vol. 7939:
Gallium Nitride Materials and Devices VI
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon, Editor(s)

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